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IMAGE SENSOR
CCD area image sensor
S9970/S9971 series
Low dark signal * low readout noise/front-illuminated FFT-CCD
S9970/S9971 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. S9970/S9971 series offer lower dark current and lower readout noise than S7010/S7011 series that have been marketed. By using the binning operation, S9970/S9971 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes S9970/S9971 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. S9970/S9971 series also feature low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a wide dynamic range. S9970/S9971 series have an effective pixel size of 24 x 24 m and are available in image areas ranging from 12.288 (H) x 1.44 (V) mm2 (512 x 60 pixels) up to a large image area of 24.576 (H) x 6.048 (V) mm2 (1024 x 252 pixels). S9970/S9971 series are pin compatible with S7010/S7011 series. (Operating conditions are a little bit changed from S7010/S7011 series.)
Features
Applications
l Low dark signal: 10 e-/pixel/s Typ. (0 C, MPP mode) l Low readout noise: 4 e-rms Typ. l 512 (H) x 60 (V) to 1024 (H) x 252 (V) pixel format l Pixel size: 24 x 24 m l Line/pixel binning l 100 % fill factor l Wide dynamic range l MPP operation
Type No. S9970-0906 S9970-1006 S9970-1007 S9970-1008 S9971-0906 S9971-1006 S9971-1007 S9971-1008 Cooling Number of total pixels 532 x 64 1044 x 64 1044 x 128 1044 x 256 532 x 64 1044 x 64 1044 x 128 1044 x 256
l Fluorescence spectrometer, ICP l Raman spectrometer l Industrial inspection requiring l Semiconductor inspection l DNA sequencer l Low-light-level detection
s Selection guide
Number of active pixels 512 x 60 1024 x 60 1024 x 124 1024 x 252 512 x 60 1024 x 60 1024 x 124 1024 x 252 Active area [mm (H) x mm (V)] 12.288 24.576 24.576 24.576 12.288 24.576 24.576 24.576 x x x x x x x x 1.440 1.440 2.976 6.048 1.440 1.440 2.976 6.048 Suitable multichannel Detector head C7020
Non-cooled
One-stage TE-cooled
C7021 C7025
s General ratings
Specification 24 (H) x 24 (V) m 2 phase 2 phase One-stage MOSFET source follower 24 pin ceramic DIP (refer to dimensional outlines) S9970 series: quartz glass Window *1 S9971 series: sapphire glass *1: Temporary window type (ex. S9970-0906N) and UV coat type (ex. S9970-0906UV) are available upon request. (Temporary window is fixed by tape to protect the CCD chip and wire bonding.) Parameter Pixel size Vertical clock phase Horizontal clock phase Output circuit Package
1
CCD area image sensor
s Absolute maximum ratings (Ta=25 C)
Parameter Operating temperature Storage temperature OD voltage RD voltage ISV voltage ISH voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -15 -15 -15 -15 -15 -15 -15 -15
S9970/S9971 series
Typ. Max. +30 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit C C V V V V V V V V V V V V
s Operating conditions (MPP mode, Ta=25 C)
Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Test point (vertical input source) Test point (horizontal input source) Test point (vertical input gate) Test point (horizontal input gate) Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage Symbol VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL Min. 18 11.5 1 -8 -8 0 -9 0 -9 0 -9 0 -9 0 -9 Typ. 20 12 3 0 VRD VRD 0 0 4 -8 4 -8 4 -8 4 -8 4 -8 Max. 22 12.5 5 6 -7 6 -7 6 -7 6 -7 6 -7 Unit V V V V V V V V V V V V V
High Low High Low High Low High Low High Low
s Electrical characteristics (Ta=25 C)
Parameter Symbol Remark Min. Signal output frequency fc S9970/S9971-0906 S9970/S9971-1006 Vertical shift register CP1V, CP2V capacitance S9970/S9971-1007 S9970/S9971-1008 S9970/S9971-0906 S9970/S9971-1006 Horizontal shift register CP1H, CP2H capacitance S9970/S9971-1007 S9970/S9971-1008 Summing gate capacitance CSG Reset gate capacitance CRG S9970/S9971-0906 S9970/S9971-1006 Transfer gate CTG capacitance S9970/S9971-1007 S9970/S9971-1008 Transfer efficiency CTE *2 0.99995 DC output level Vout *3 12 Output impedance Zo *3 Power dissipation P *3, *4 *2: Charge transfer efficiency per pixel, measured at half of the full well capacity. *3: The values depend on the load resistance. (VOD=20 V, Load resistance=22 k) *4: Power dissipation of the on-chip amplifier. Typ. 0.1 750 1500 3000 6000 100 180 180 180 7 7 60 100 100 100 0.99999 15 3 15 Max. 1 Unit MHz pF pF pF pF pF 18 V k mW
2
CCD area image sensor
S9970/S9971 series
s Electrical and optical characteristics (Ta=25 C, unless otherwise noted)
Parameter Symbol Remark Min. Typ. Max. Unit Saturation output voltage Vsat Fw x Sv V Vertical 150 300 Full well Fw kecapacity Horizontal 300 600 CCD node sensitivity Sv *5 3.5 V/e+25 C 200 3000 Dark current DS *6 e-/pixel/s (MPP mode) 0 C 10 150 Readout noise Nr *7 4 18 e-rms Line binning 16666 150000 Dynamic range *8 Area scanning 8333 75000 Spectral response range 400 to 1100 nm Photo response non-uniformity PRNU *9 10 % Point defects *10 0 Blemish Cluster defects *11 0 Column defects *12 0 *5: VOD=20 V , Load resistance=22 k *6: Dark current nearly doubles for every 5 to 7 C increase in temperature. *7: -40 C, operating frequency is 80 kHz. *8: DR = Fw / Nr *9: Measured at half of the full well capacity. PRNU = noise / signal x 100 [%], noise: fixed pattern noise (peak to peak) *10: White spots > 3 % of full well at 0 C after Ts=1 s Black spots Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing onehalf of the saturation charge) *11: 2 to 9 contiguous defective pixels *12: 10 or more contiguous defective pixels
s Spectral response (without window)
50 (Typ. Ta=25 C)
s Spectral transmittance characteristics
100 90 (Typ. Ta=25 C)
QUANTUM EFFICIENCY (%)
40
80
TRANSMITTANCE (%)
QUARTZ WINDOW 70 SAPPHIRE WINDOW 60 50 40 30 20 10
30
20 UV COAT 10
0 200 300 400 500 600 700 800 900 1000 1100 1200
0 100 200 300 400 500 600 700 800 900 1000
WAVELENGTH (nm)
KMPDB0244EB
WAVELENGTH (nm)
KMPDB0101EA
3
CCD area image sensor
s Device structure, line output format
IG1V IG2V ISV 24 23 22 SS 20 TG 16 P1V 15 P2V 14
S9970/S9971 series
V
......
V=60, 124, 252 H=512, 1024 ...... H
1 RG RD OS 1
D1 D2 D3 D4 D5 D6 D7 D8 D9 D10
2 3
......
D11 D12 D13 D14 D15 D16 D17 D18 D19 D20
13 ISH 12 IG1H
4 OD
5 OG
9 10 11 IG2H 2 ISOLATION 512 or 2 ISOLATION P2H P1H 1024 4 OPTICAL SIGNAL OUT 4 OPTICAL 4 BLANK 4 BLANK BLACK BLACK
6 SG
KMPDC0015EB
Pixel format
Blank 4 Optical Black 4 Left Horizontal Direction Right Isolation Effective Isolation 2 512 or 1024 2 Top Vertical Direction Bottom Isolation Effective Isolation 2 60, 124 or 252 2 Optical Black 4 Blank 4
s Timing chart Line binning
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG Tpwh, Tpws P1H P2H, SG Tpwr RG OS D1 D2 S1..S512 D19 D3..D10, S1..S1024, D11..D18 D20: S9970/1-0906 : S9970/1-1006/-1007/-1008 1 2 3 4..530 531 4..1042 1043 532 : S9970/1-0906 1044: S9970/1-1006/-1007/-1008 VERTICAL BINNING PERIOD READOUT PERIOD (Shutter must be closed) (Shutter must be closed) 64 60 + 4 (ISOLATION): S9970/1-0906/-1006 63 3.. 62 128 124 + 4 (ISOLATION): S9970/1-1007 3..126 127 256 252 + 4 (ISOLATION): S9970/1-1008 3..254 255 2 Tovr
KMPDC0227EA
4
CCD area image sensor
S9970/S9971 series
Area scanning 1: low dark current mode
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 READOUT PERIOD (Shutter must be closed) 4.. 63 64 60 + 4 (ISOLATION): S9970/1-0906/-1006 4..127 128124 + 4 (ISOLATION): S9970/1-1007 4..255 256252 + 4 (ISOLATION): S9970/1-1008 3
P2H, SG RG OS
Tpwr
D1
D2
D3
S1..S512 D4 D18 D5..D10, S1..S1024, D11..D17
D19
D20: S9970/1-0906 : S9970/1-1006/-1007/-1008
KMPDC0228EA
Area scanning 2: large full well mode
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 READOUT PERIOD (Shutter must be closed) 4.. 63 64 60 + 4 (ISOLATION): S9970/1-0906/-1006 4..127 128124 + 4 (ISOLATION): S9970/1-1007 4..255 256252 + 4 (ISOLATION): S9970/1-1008 3
P2H, SG RG OS
Tpwr
D1
D2
D3
S1..S512 D4 D18 D5..D10, S1..S1024, D11..D17
D19
D20: S9970/1-0906 : S9970/1-1006/-1007/-1008
KMPDC0229EA
Param eter Pulse width S9970/S9971-0906 S9970/S9971-1006 S9970/S9971-1007 S9970/S9971-1008
Sym bol Tpwv
Rem ark * 13 * 13 * 14 -
P1V, P2V, TG
Rise and fall tim e Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall tim e Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall tim e Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall tim e Tprr, Tpfr TG - P1H Overlap tim e Tovr *13: The clock pulses should be overlapped at 50 % of clock pulse am plitude. *14: P2H and SG should have the sam e electrical specifications.
Min. 1.5 3.0 6.0 12 200 500 10 500 10 100 5 3
Typ. 4.5 9.0 18 36 5000 50 5000 50 500 6
Max. -
Unit s ns ns ns % ns ns % ns ns s
5
CCD area image sensor
s Dimensional outlines (unit: mm) S9970-0906
a PHOTOSENSITIVE SURFACE 1.1 0.3
S9970/S9971 series
31.75 0.3 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE
3.0
0.46 2.54 27.94
KMPDA0193EA
S9970-1006/-1007
a PHOTOSENSITIVE SURFACE 1.1 0.3
10.05 0.25
b
40.64 0.41 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE
0.46 2.54 27.94
KMPDA0194EA
S9970-1008
a PHOTOSENSITIVE SURFACE 1.1 0.3
3.0
10.05 0.25
b
40.64 0.41 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE
3.0
14.99 0.25
b
Type No. S9970-0906 S9970-1006 S9970-1007 S9970-1008
0.46 2.54 27.94
KMPDA0195EA
Active area a b 12.288 (H) 1.440 (V) 24.576 (H) 1.440 (V) 24.576 (H) 2.976 (V) 24.576 (H) 6.048 (V)
6
CCD area image sensor
S9971-0906
a
b c
S9970/S9971 series
3.2 0.4
5.0 32.0 0.3 50.0 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE
TE-COOLER
0.46 2.54 27.94
7.65 0.5
14.99 0.25
4.0
12.0
KMPDA0196EA
S9971-1006/-1007
a 3.2 0.4
b
c
5.0 40.64 0.41 58.84 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE
14.99 0.25
4.0
12.0
Type No.
TE-COOLER
0.46 2.54 27.94
7.65 0.5
S9971-0906 S9971-1006 S9971-1007
KMPDA0197EA
a 12.288 (H) 24.576 (H) 24.576 (H)
Active area b 1.440 (V) 1.440 (V) 2.976 (V)
c 7.5 7.5 7.1
S9971-1008
WINDOW 28.6 ACTIVE AREA 24.576
6.048
19.0
22.4
2.54 44.0 52.0 60.0
1st PIN INDICATION PAD
PHOTOSENSITIVE SURFACE
4.0
22.9
8.2
TE-COOLER
1.0
(24x) 0.5
5.3
6.7
7.3
7.7
KMPDA0198EA
7
CCD area image sensor
s Pin connections
S9970/S9971 series
S9970 series S9971 series Remark Symbol Description Symbol Description 1 RG Reset gate RG Reset gate 2 RD Reset drain RD Reset drain 3 OS Output transistor source OS Output transistor source 4 OD Output transistor drain OD Output transistor drain 5 OG Output gate OG Output gate 6 SG Summing gate SG Summing gate Same timing as P2H 7 NC Th1 Thermistor 8 NC Th2 Thermistor 9 P2H CCD horizontal register clock-2 P2H CCD horizontal register clock-2 10 P1H CCD horizontal register clock-1 P1H CCD horizontal register clock-1 11 IG2H Test point (horizontal input gate-2) IG2H Test point (horizontal input gate-2) Shorted to GND 12 IG1H Test point (horizontal input gate-1) IG1H Test point (horizontal input gate-1) Shorted to GND 13 ISH Test point (horizontal input source) ISH Test point (horizontal input source) Shorted to RD 14 P2V CCD vertical register clock-2 P2V CCD vertical register clock-2 15 P1V CCD vertical register clock-1 P1V CCD vertical register clock-1 16 TG *15 Transfer gate TG *15 Transfer gate Same timing as P2V 17 NC NC 18 NC PTE-cooler19 NC P+ TE-cooler+ 20 SS Substrate (GND) SS Substrate (GND) 21 NC NC 22 ISV Test point (vertical input source) ISV Test point (vertical input source) Shorted to RD 23 IG2V Test point (vertical input gate-2) IG2V Test point (vertical input gate-2) Shorted to GND 24 IG1V Test point (vertical input gate-1) IG1V Test point (vertical input gate-1) Shorted to GND *15: TG is an isolation gate between vertical register and horizontal register. In standard operation, the same pulse as P2V should be applied to TG. Pin No.
s Specifications of built-in TE-cooler (Typ.)
Parameter Symbol Condition S9971-0906 S9971-1006/-1007 S9971-1008 Unit Internal resistance Rint Ta=25 C 2.8 6.0 1.2 16 17=Th *18=25 C Maximum current * Imax Tc * 1.5 1.5 3.0 A Maximum voltage Vmax Tc *17=Th *18=25 C 4.4 8.8 3.6 V Maximum heat Qmax 3.4 6.7 5.1 W absorption *19 Maximum temperature 70 C of hot side *16: Maximum current Imax: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not a damage threshold. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *17: Temperature of cool side of thermoelectric cooler *18: Temperature of hot side of thermoelectric cooler *19: Maximum heat absorption Qmax This is a heat absorption when the maximum current is supplied to the TE-cooler.
8
CCD area image sensor
s TE-cooler characteristics S9971-0906
S9970/S9971 series
S9971-1006/-1007
5
(Typ. Ta=25 C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT
20
10
(Typ. Ta=25 C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT
20
CCD TEMPERATURE (C)
3
0
6
0
2
-10
4
-10
1
-20
2
-20
0
0
0.5
1.0
1.5
-30 2.0
0 0 0.5 1.0 1.5
-30 2.0
CURRENT (A)
KMPDB0176EB
CURRENT (A)
KMPDB0177EB
S9971-1008
7 6 5
(Typ. Ta=25 C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT
30 20 10 0 -10 -20 -30 -40
4 3 2 1 0 0 1 2 3 4
CURRENT (A)
KMPDB0179EB
CCD TEMPERATURE (C)
VOLTAGE (V)
CCD TEMPERATURE (C)
4
10
8
10
VOLTAGE (V)
VOLTAGE (V)
9
CCD area image sensor
s Specifications of built-in temperature sensor
S9970/S9971 series
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. R1 = R2 x expB (1 / T1 - 1 / T2) where R1 is the resistance at absolute temperature T1 (K) R2 is the resistance at absolute temperature T2 (K) B is so-called the B constant (K) The characteristics of the thermistor used are as follows. R (298K) = 10 k B (298K / 323K) = 3450 K
RESISTANCE
1 M
100 k
10 k 220
240
260
280
300
TEMPERATURE (K)
s Precaution for use (Electrostatic countermeasures)
KMPDB0111EB
q Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist strap, in order to prevent electrostatic damage due to electrical charges from friction. q Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. q Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. q Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs.
s Element cooling/heating temperature incline rate
When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute.
Multichannel detector head (C7020, C7021, C7025)
Features
l C7020: for S9970 series
C7021: for S9971-0906/-1006/-1007 C7025: for S9971-1008 l Area scanning or full line-binnng operation l Readout frequency: 250 kHz l Readout noise: 20 e-rms l T=50 C (T changes by radiation method.)
Input
Supply voltage
Master start Master clock
Symbol VD1 VA1+ VA1VA2 VD2 Vp VF ms mc
Value +5 Vdc, 200 mA +15 Vdc, +100 mA -15 Vdc, -100 mA +24 Vdc, 30 mA +5 Vdc, 30 mA (C7021, C7025) +5 Vdc, 2.5 A (C7021, C7025) +12 Vdc, 100 mA (C7021, C7025) HCMOS logic compatible HCMOS logic compatible, 1 MHz
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1089E06 Feb. 2007 DN
10

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